5744.1:
Evaluation of high-speed performance of quantum wire light-emitting diodes
Abstract
We have recently discovered a way of selectively injecting charge carriers into GaAs/AlGaAs V-groove quantum wires (QWRs) via self-ordered vertical quantum wells. This allowed us to develop novel QWR light-emitting-diodes (LEDs) exhibiting high internal quantum efficiencies with very narrow linewidth electroluminescence (≈ 8 nm) from one-dimensional excitons at room temperature [1]. In order to make these LEDs useful as narrow-linewidth LED sources for high speed (≈ 1 GHz) optical links, we here want to evaluate and maximize the potential modulation speed of these devices by determining the dependence of the radiative lifetime on the 1D confinement potential, doping profile and carrier density.