5812.1:
Electrodeposited magnetic nanowires for sensor and memory applications
Abstract
The objective of the project is to allow the integration of the membrane template synthesis technology in the context of magnetic random access memory (M-RAM) applications.
In the first stage of the project, a one-bit prototype of M-RAM of sub-100nm size was manufactured by electrodeposition into nanoporous membrane templates. Nano sensors based on ballistic magnetoresistance (BMR) effect were also obtained.
The aim of the present project is to optimize the signal and membrane in order to allow integration of the array of memory units (Mbit) into C-MOS production lines.