4590.1:
Development of novel optical near-field probes utilizing semiconductor quantum dots as nanoscopic light emitters/detectors
Abstract
A novel optical near field probe (ONFP) based on an epitaxial III/V semiconductor quantum dot (QD) structure will be developed. The device consists of a pn junction incorporating a QD (~20nm in diameter) situated near the sharp tip (~10nm curvature) of a tetrahedral pyramid. The small dimensions will ensure high spatial resolution (100nm or better) while probing a surface with such a device in an emission or a detection mode. Such a QD probe integrated with a cantilever would be useful in scanning near-field optical microscopy with relatively high throughput. The fabrication relies on standard semiconductor processing techniques allowing for precise process control, high reproducibility, and opening the possibility of ONFP mass production.