4591.1:
GaAs-based long wavelength quantum wire and quantum dot lasers
Abstract
We aim at integrating a nanometer scale light source such as dense arrays of InGaAs/GaAs quantum wires into an edge-emitting laser for long wavelength optical communications.
The fabrication of this nanostructured device will be optimized to achieve low threshold current and high differential efficiency. The achievement of lasing at 1.3µm wavelength using GaAs substrates rather than InP will result in lower production costs, superior thermal properties and possible integration with GaAs electronics for optoelectronic integrated circuits applications.