6499.1:
Reliability and degradation physics of ultra-thin dielectrics ("Nanoxide")
Abstract
The subject of the project is the development of reliability models for dielectric layers below 5 nm thickness on a physical basis. Current CMOS technology uses layers as thin as about 3 nm, and existing reliability models are empirical.
By systematic electrical testing combined with physical failure analysis, the physical structure of the new failure mechanism, the soft breakdown, shall be revealed. Quantum mechanical (ab-initio) calculation models shall be extended to calculate the formation of atomic defects of a realistic material structure under external electric field, temperature, hydrogen diffusion, interaction with energetic tunnelling electrons or holes.