4592.1:
Coherent High Power Vertical-Cavity Surface-Emitting Lasers (VCSELs) Incorporating Nanostructured Mirrors
Abstract
The objective of this project is to develop a vertical-cavity laser device capable of emitting high power (~100mW) in a single, diffraction-limited beam. The optical mode is controlled laterally via nanostructuring broad-area VCSELs, similar to approaches used for photonic lattice applications. This involves etching lines and/or holes, <1µm in width and with better than 100 nm position accuracy, in the upper surface of a semiconductor Bragg mirror using focused ion beam etching (FIBE) technology. A proper design of this mirror patterning should ensure high optical mode selectivity without compromising the laser efficiency. Furthermore, to achieve the desired beam shape (e.g., single lobe, diffraction limited far-field pattern), integrated diffractive optics will be realized on the back side of the wafer using electron beam lithography and dry etching. This will require the fabrication of sub-µm relief patterns with a registration of 100nm or less with respect to the patterned mirror.